Semikron has introduced SKiiP4, a new generation of intelligent IGBT power modules that offers a longer service life than non-sintered modules and can be used in higher-temperature applications. The new pack is the most powerful intelligent power module on the market and is 33 percent more powerful than its predecessor. It will be used mainly in wind and solar power applications, traction systems, elevator systems and industrial drives with outputs of between 400kW and 1.8MW.
For comparable conditions and module sizes, the SKiiP4 provides 33 percent more power than the current version of this module family, SKiiP3. This allows development of more powerful or more compact frequency converters, thus reducing costs. This increase in power is a result of the use of an innovative pressure contact system, an improved heat sink and IGBT4, CAL4 chip technology. In addition, six parallel half bridges have been used for the first time at the upper power end instead of four, as has been the case until now.
In SKiiP4 modules, the semiconductor chips are not soldered to the ceramic substrate but are joined using sinter technology, meaning that higher operating temperatures are possible with no reduction in – or in some cases even increased – reliability. The sinter bond is a thin silver layer that has a lower thermal resistance than a bond with solders. The high melting point of silver prevents premature material fatigue.
Like its predecessors, SKiiP4 modules are based on well-matched components: heat sink, power module, driver and protective sensors/functions. The mounting and connecting technology, which is based on a pressure system, plays a crucial role. Customers can also opt to have unique burn-in tests in which the IPMs are run under real operating conditions. These tests expose the modules to the maximum possible junction temperature and enable premature silicon failure to be identified and the defective chips removed.
The solder-free pressure contact system and the integrated laminated power rails used in SKiiP4 ensure homogenous current distribution. Each IGBT and diode chip is connected to the main terminal separately, keeping the module resistance very low. The chips are not soldered to the ceramic substrate but are joined in a sinter process. As these modules have no base plate, the solder-free connection between DCB and heat sink is quasi-flexible, which is why the thermal cycling capability has no upper limits. SKiiP4 will be available with blocking voltages of 1200V and 1700V in dual-pack topologies with three, four or six parallel half bridges per IPM.
Digital signal transmission for the switching signals is the key to ensuring both a very high degree of reliability and interference immunity for switching signals. In addition to various technical advantages, this ensures high signal integrity and, consequently, interference immunity. Transmission depends on component parameters, is highly robust and not sensitive to temperature fluctuations or ageing effects. The switching and sensor signal transmission channels feature galvanic isolation, meaning the user does not have to provide additional isolation. The new SKiiP4 IPM also features a multi-stage output stage, which ensures the reduction of overvoltage and includes various other protective functions. Finally, a diagnosis channel is available for optimum customer evaluation.
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